View SW7N60_1320101.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SAMWIN
Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 1 ohm : 7.0 A : 30 nc : 142 W
SW7N60
General Description
This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. D
G S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source Voltage Continuous Drain Current (@Tc=25) Continuous Drain Current (@Tc=100) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25) Derating Factor above 25 Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
600 7 4.7 28 30 530 14.2 4.5 142 1.14 -55~+150 300
Units
V A A A V mJ mJ V/ns W W/
Thermal Characteristics
Value Symbol
ReJC ReCS ReJA
Units Max
0.88 / W / W 62.5 / W
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min
-
Typ
0.5 -
1/6
REV0.2
04.11.1
SAMWIN
Electrical Characteristics
Symbol Off Characteristics
BVDSS BVDSS / Tj IDSS Drain- Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage Current IGSS Gate-Source Leakage Reverse VGS=0V,ID=250uA ID=250uA,referenced to 25 VDS=600V, VGS=0V VDS=480V, Tc=125 VGS=30V,VDS=0V VGS=-30V, VDS=0V 600 (Tc=25 unless otherwise noted)
SW7N60
Value Test Conditions Min Typ Max Units
Parameter
0.67
-
V V/
-
-
1 100 -100
uA nA nA
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance VDS=VGS ,ID=250uA VGS=10V,ID=3.5A 3.0 0.85 5.0 1 V ohm
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz 1200 150 18 1500 190 25 pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time (Note4,5) Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) VDS=480V,VGS =10V, ID=7.0A (Note4,5) 52 30 6.5 13 100 nc VDD=300V,ID=7.0A 35 79 80 70 130 ns 240
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Parameter
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction Diode in the MOSFET
Min.
-
Typ.
320 2.4
Max.
7 28 1.4 -
Unit.
A
IS=7.0A,VGS=0V IS=7.0A,VGS=0V, dIF/dt=100A/us
V ns uc
NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=19.5mH,IAS=7.0A,VDD=50V,RG=0ohm, Starting TJ=25 3. ISD7.0A,di/dt100A/us,VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300us,Duty Cycle2% 5. Essentially independent of operating temperature.
2/6
REV0.2
04.11.1
SAMWIN
10
VGS top:10V 8V 7.5V 7V 6.5V 6V 5.5V bottom:5.5V
SW7N60
10
ID,Drain Current [A]
ID,Drain Current [A]
25 C
o
o
150 C
1
1
Note:
1.250us pulse test 2.TC=25 C
o
Note:
1.VDS=50V 2.250us pulse test.
0.1
0.1 0.1 1 10
2
4
6
8
10
VDS,Drain-to-Source voltage [V]
VGS, Gate-Source Voltage [V]
Fig 1. On-State Characteristics
Fig 2. Transfer Characteristics
2.5
Drain-Source On-Resistance[ohm]
2.0
VGS=20V
1.5
VGS=10V
IDR,Reverse Drain Current[A]
10
150 C
1
o
25 C
o
RDS(ON)
1.0
0.5
Note:TJ=25 C
o
Note:
1.vGS=0v 2.250us test
0.0 0 5 10 15 20 25
0.1 0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current[A]
VSD,Source-Drain Voltage[V]
Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage
2000
Ciss = Cgs+Cgd(Cds=shorted) Coss= Cds+Cgd
Fig 4. On State Current vs. Allowable Case Temperature
12
1600
10
VDS=480V VDS=300V
Crss = Cgd
V GS,Gate-Source Voltage [V]
Ciss
8
Capacitance [pF]
1200
Coss
VDS=120V
6
800
Note:
Crss
400
1.VGS=0V 2.f=1MHz.
4
2
Note:ID=7A
0 0 10 20 30 40 50 60 70
0 0.1
1
10
VDS,Drain-Source Voltage [V]
QG,Total Gate Charge [nC]
Fig 5. Capacitance Characteristics (Non-Repetitive)
3/6
Fig 6. Gate Charge Characteristics
REV0.2
04.11.1
SAMWIN
1.2
SW7N60
3.0 2.5
Drain-Source Breakdown Voltage
Drain-Source On-Resistance
1.1
BV DSS[Normalized]
2.0
RDs(on)(Normalized)
1.0
1.5
1.0
0.9
Note:
1.VGS=0V 2.ID=250uA
0.8 -100 -50 0 50 100
o
0.5
Note:
1.VGS=10V 2.ID=3.5A
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ,Junction Temperatur [ C]
TJ,Junction Temperature[ C]
Fig 7. Breakdown Voltage Variation vs. Junction Temperature
8
100
Fig 8. On-Resistance Variation vs. Junction Temperature
Operation In This Area Limted By RDS(ON)
6
ID, Drain Current[A]
1ms 10ms DC
1
Note:
ID, Drain Current[A]
10
100us
4
2
1.Tc=25C 2.Tj=150C 3.Single Pulse 0.1 1 10 100 1000
0 25
50
75
100
o
125
150
VD,Drain-Source Voltage[V]
Tc,Case Temperature [ C]
Fig9. Maximum Safe Operating
Fig 10. Maximum Drain Current Vs. Case Temperature
1
(t),Thermal Response
D = 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e 0 .0 1
N o te :
o
JC
1 . Z JC ( t ) = 0 . 8 8 C / w M a x 2 . D u t y F a c t o r ,D = t 1 / t2 3 . T j-T c = P D M * Z J C ( t )
Z
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
Fig 11. Transient Thermal Response Curve
t 1 ,S q u a r e W a v e P u ls e D u r a ti o n ( s e c )
4/6
REV0.2
04.11.1
SAMWIN
Same Type as DUT
300nF
SW7N60
VGS
10V
Qg Qgs Qgd
50KU 200nF
VDS VGS
DUT
1mA
Charge
Fig 12. Gate Charge test Circuit & Waveforms
RL VDS
VDD (0.5 rated VDS)
VDS
90%
10V
Pulse Generator
RG
DUT
Vin
10% tf
td(off)
td(on) tr ton
toff
Fig 13. Switching test Circuit & Waveforms
L VDS VDD BVDSS RG DUT 10V IAS VDD
1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD
ID(t)
VDS(t)
tp
Time
Fig 14. Unclamped Inductive Switching test Circuit & Waveforms
5/6
REV0.2
04.11.1

▲Up To Search▲

Price & Availability of SW7N60

	To Download SW7N60 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .